unisonic technologies co., ltd bc556/557/558 pnp silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2010 unisonic technologies co., ltd qw-r201-051.c switching and amplifier applications ? features * high voltage: bc556, v ceo =-65v to-92 1 ? ordering information ordering number pin assignment normal lead free plating halogen free package 1 2 3 packing bc556-x-t92-b bc556l-x-t92-b bc556g-x-t92-b to-92 c b e tape box bc556-x-t92-k bc556l-x-t92-k bc556g-x-t92-k to-92 c b e bulk bc557-x-t92-b bc557l-x-t92-b bc557g-x-t92-b to-92 c b e tape box bc557-x-t92-k bc557l-x-t92-k bc557g-x-t92-k to-92 c b e bulk bc558-x-t92-b bc558l-x-t92-b BC558G-X-T92-B to-92 c b e tape box bc558-x-t92-k bc558l-x-t92-k bc558g-x-t92-k to-92 c b e bulk
bc556/557/558 pnp silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r201-051.c ? absolute maximum rating (ta=25c, unless otherwise specified) parameter symbol ratings unit bc556 -80 v bc557 -50 v collector-base voltage bc558 v cbo -30 v bc556 -65 v bc557 -45 v collector-emitter voltage bc558 v ceo -30 v emitter-base voltage v ebo -5 v collector current (dc) i c -100 ma power collector dissipation 625 mw linear derating factor above (ta=25c) p c 5 mw/c junction temperature t j 150 c storage temperature t stg -55~+150 c note: absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit junction to ambient ja 200 c/w junction to case jc 83.3 c/w ? electrical characteristics (ta=25c, unless otherwise specified) parameter symbol test conditions min typ max unit bc556 -65 v bc557 -45 v collector-emitter breakdown voltage bc558 bv ceo i c =-10ma, i b =0 -30 v bc556 -80 v bc557 -50 v collector-base breakdown voltage bc558 bv cbo i c =-100 a -30 v emitter-base breakdown voltage bv ebo i e =-10 a, i c =0 -5.0 v collector cut-off current i cbo i e = 0, v cb =-30 v -15 na dc current gain h fe v ce =-5v, i c =2ma 110 800 i c =-10ma, i b =-0.5ma -90 -300 mv collector-emitter satu ration voltage v ce(sat) i c =-100ma, i b =-5ma -250 -650 mv i c =-10ma, i b =-0.5ma -700 mv base-emitter satura tion voltage v be(sat) i c =-100ma, i b =-5ma -900 mv v ce =-5 v,i c =-2ma -600 -660 -750 mv base-emitter turn -on voltage v be(on) v ce =-5 v,i c =-10ma -800 mv current gain bandwidth product f t v ce =-5v, i c =-10ma, f =10mhz 150 mhz output capacitance c ob v cb =-10v, i e =0, f=1mhz 6 pf noise figure nf v ce =-5v, i c =-200 a f=1khz, r g =2k ? 2 10 db ? classification of h fe rank a b c h fe 110 - 220 200 - 450 420 - 800
bc556/557/558 pnp silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r201-051.c ? typical characteristics collector current, i c (ma) dc current gain, h fe saturation voltage, v be(sat) , v ce(sat) collector current, i c (ma) capacitance,c (pf) current gain-bandwidth product,f t (mhz)
bc556/557/558 pnp silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r201-051.c utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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